PART |
Description |
Maker |
KM641003B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM641001A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
MB81N643289 |
DRILL BIT HIGH SPEED STEEL .021,1 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM
|
Fujitsu Limited Fujitsu Component Limited.
|
MB81C84A |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|
LY6125616 LY6125616E LY6125616I LY6125616LL LY6125 |
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
KM641003CJ-10 |
256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM
|
Samsung Electronics
|
P4C1041-10JC P4C1041-10JI P4C1041-10TC P4C1041-10T |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Pyramid Semiconductor C... Pyramid Semiconductor, Corp. Pyramid Semiconductor Corporation
|
HY62SF16406E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|